1Gb: x8, x16 Automotive DDR2 SDRAM
Features
Automotive DDR2 SDRAM
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Options1
Features
•
•
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•
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Marking
• Configuration
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x8
– 60-ball FBGA (8mm x 10mm)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm)
• FBGA package (lead solder) – x8
– 60-ball FBGA (8mm x 10mm)
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm)
• Timing – cycle time
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Product certification
– Automotive
• Operating temperature
– Industrial (–40°C ≤ T C ≤ +95°C)
– Automotive (–40°C ≤ T C ≤ +105ºC)
• Revision
Industrial and automotive temperature compliant
VDD = 1.8V ±0.1V, V DDQ = 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
32ms, 8192-cycle refresh
On-die termination (ODT)
RoHS-compliant
AEC-Q100
PPAP submisson
8D response time
Note:
128M8
64M16
CF
HR, RP
JN
HW
-25E
-3
None
L
A
IT
AT
:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
Table 1: Key Timing Parameters
Data Rate (MT/s)
tRC
Speed Grade
CL = 3
CL = 4
CL = 5
CL = 6
CL = 7
-25E
400
533
800
800
n/a
55
-25
400
533
667
800
n/a
55
-3
400
533
667
n/a
n/a
55
PDF: 09005aef840eff89
1gbddr2_ait_aat.pdf – Rev. D 11/13 EN
1
(ns)
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Products and specifications discussed herein are subject to change by Micron without notice.