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MT47H128M8CF-25E

製品説明
仕様・特性

1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration – 128 Meg x 8 (16 Meg x 8 x 8 banks) – 64 Meg x 16 (8 Meg x 16 x 8 banks) • FBGA package (Pb-free) – x8 – 60-ball FBGA (8mm x 10mm) • FBGA package (Pb-free) – x16 – 84-ball FBGA (8mm x 12.5mm) • FBGA package (lead solder) – x8 – 60-ball FBGA (8mm x 10mm) • FBGA package (lead solder) – x16 – 84-ball FBGA (8mm x 12.5mm) • Timing – cycle time – 2.5ns @ CL = 5 (DDR2-800) – 3.0ns @ CL = 5 (DDR2-667) • Self refresh – Standard – Low-power • Product certification – Automotive • Operating temperature – Industrial (–40°C ≤ T C ≤ +95°C) – Automotive (–40°C ≤ T C ≤ +105ºC) • Revision Industrial and automotive temperature compliant VDD = 1.8V ±0.1V, V DDQ = 1.8V ±0.1V JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Programmable burst lengths (BL): 4 or 8 Adjustable data-output drive strength 32ms, 8192-cycle refresh On-die termination (ODT) RoHS-compliant AEC-Q100 PPAP submisson 8D response time Note: 128M8 64M16 CF HR, RP JN HW -25E -3 None L A IT AT :H 1. Not all options listed can be combined to define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. Table 1: Key Timing Parameters Data Rate (MT/s) tRC Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 -25E 400 533 800 800 n/a 55 -25 400 533 667 800 n/a 55 -3 400 533 667 n/a n/a 55 PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. D 11/13 EN 1 (ns) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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