TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
JANHC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
2N2221A, L; 2N2222A, L (1)
2N2221AUA; 2N2222AUA (2)
2N2221AUB; 2N2222AUB (1)
Operating & Storage Junction Temperature Range
Symbol
All Types
Unit
VCEO
VCBO
VEBO
IC
50
75
6.0
800
Vdc
Vdc
Vdc
mAdc
0.5
0.65
0.50
-65 to +200
W
PT
Top, Tstg
TO-18* (TO-206AA)
2N2221A, 2N2222A
0
C
4 PIN*
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
1) Derate linearly 3.08 mW/0C above TA > +37.50C
2) Derate linearly 4.76 mW/0C above TA > +63.50C
2N2221AUA, 2N2222AUA
Symbol
Max.
RθJA
Unit
325
210
325
0
C/W
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
Max.
50
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB= 75 Vdc
VCB= 60 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
Collector-Base Cutoff Current
VCE = 50 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICBO
10
10
µAdc
ηAdc
IEBO
10
10
µAdc
ηAdc
ICES
50
ηAdc
120101
Page 1 of 2
