UTC 2SC2235
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
APPLICATIONS
DRIVER STAGE AMPLIFIER
APPLICATIONS
FEATURES
*Complimentary to 2SA965
1
TO-92NL
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
Pc
Ic
IE
TJ
TSTG
120
120
5
900
800
-800
150
-55 ~ +150
V
V
V
mW
mA
mA
°C
°C
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector Power Dissipation
Collector Current
Emitter Current
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter
Symbol
Test conditions
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output capacitance
ICBO
IEBO
VCB=120V,IE=0
VEB=5V,Ic=0
Ic=10mA,IB=0
IE=1 mA, Ic=0
VCE=5V,Ic=100mA
Ic=500mA,IB=50mA
VCE=5V,Ic=500mA
VCE=5V,Ic=100mA
VCB=10V,IE=0,f=1MHz
VBR(CEO)
VBR(EBO)
hFE
VCE(sat)
VBE
fT
Cob
MIN
TYP
UNIT
100
100
120
5
80
MAX
nA
nA
V
V
240
1.0
1.0
120
30
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
UTC
Y
120-240
O
80-160
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-012,A
