2SB887 / 2SD1197
Ordering number : EN1079B
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Darlington Transistor
NPN Triple Diffused Planar Silicon Darlington Transistor
2SB887 / 2SD1197
Driver Applications
Applications
•
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
•
•
•
High DC current gain.
Large current capacity and wide ASO.
Low saturation voltage.
Specifications ( ) : 2SB887
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)110
V
Collector-to-Emitter Voltage
VCEO
(-)100
V
Emitter-to-Base Voltage
VEBO
(-)6
V
IC
(--)10
A
ICP
(--)15
A
2.5
W
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
70
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Conditions
Ratings
min
VCE=(--)3V, IC=(--)5A
VCE=(--)5V, IC=(--)5A
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)5mA, IE=0A
IC=(--)50mA, RBE=∞
Unit
(--)0.1
1500
mA
(--)3.0
IC=(--)5A, IB=(--)10mA
IC=(--)5A, IB=(--)10mA
Collector-to-Base Breakdown Voltage
max
VCB=(--)80V, IE=0A
VEB=(--)5V, IC=0A
hFE
fT
Gain-Bandwidth Product
typ
mA
4000
20
(-1.0)0.9
MHz
(--)1.5
V
(--)2.0
V
(-)110
V
(--)100
V
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0606IA TI IM TC-00000382 / D1002AS (KT) / 91098HA (KT) / 4177TA / D152KI, TS No.1079-1/4
