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DTD114ES
DTD114ES Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V(BR)CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.56 h(FE) Max. Current gain. @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m @I(B) (A) (Test Condition)250u RB (Ohms) Base input resistor.10k RBE (Ohms) Base-Emit. resistor10k Collector-Emitter Diode? Y/NNo Semiconductor MaterialSilicon
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