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BR24L04-W
BR24L04-W / BR24L04F-W / BR24L04FJ-W BR24L04FV-W / BR24L04FVM-W Memory ICs 512×8 bit electrically erasable PROM BR24L04-W / BR24L04F-W / BR24L04FJ-W / BR24L04FV-W / BR24L04FVM-W The BR24L04-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I C BUS is a registered trademark of Philips. 2 Applications General purpose Features 1) 512 registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.2mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1µA (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL•SDA for noise suppression. 14) Initial data FFh in all address. Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol Limits VCC −0.3 to +6.5 Unit V 800(DIP8) ∗1 450(SOP8) ∗2 ∗2 ∗3 310(MSOP8) Pd 450(SOP-J8) 300(SSOP-B8) Power dissipation ∗4 mW Storage temperature Tstg −65 to +125 °C Operating temperature Topr −40 to +85 °C Terminal voltage ∗1 ∗2 ∗3 ∗4 − −0.3 to VCC+0.3 V Reduced by 8.0mW for each increase in Ta of 1°C over 25°C. Reduced by 4.5mW for each increase in Ta of 1°C over 25°C. Reduced by 3.0mW for each increase in Ta of 1°C over 25°C. Reduced by 3.1mW for each increase in Ta of 1°C over 25°C. 1/25
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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