HOME＞在庫検索＞在庫情報
HR1L3N
DATA SHEET COMPOUND TRANSISTOR HR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive HR1 SERIES LISTS Products Marking R1 (KΩ) R2 (KΩ) HR1A3M MP 1.0 1.0 HR1F3P MQ 2.2 10 HR1L3N MR 4.7 10 HR1A4, MS 10 10 HR1L2Q MT 0.47 4.7 HR1F2Q MU 0.22 2.2 HR1A4A MX − 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −1.0 A IC(pulse) * −2.0 A Base current (DC) IB(DC) −0.02 A Total power dissipation Collector current (Pulse) PT ** 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ** When 0.7 mm × 16 cm ceramic board is used 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16184EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998
RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年（平成22年）4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ＆ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
見積依頼→在庫確認→見積回答→注文→検収→支払 となります。
