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AS6C6264-55SCN

製品説明
仕様・特性

February 2007 AS6C6264 ® 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product Fully Compatible with all Competitors 3.3V product All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 28-pin 600 mil PDIP 28-pin 330 mil SOP 28-pin 8mm x 13.4mm sTSOP FUNCTIONAL BLOCK DIAGRAM The AS6C6264 is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C6264 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C6264 operates with wide range power supply. PIN DESCRIPTION SYMBOL A0 - A12 DQ0-DQ7 CE# CE2 WE # OE # WE# Write Enable Input Output Enable Input Power Supply Ground NC I/O DAT A C IR C UIT Chip Enable Inputs VSS 8K x8 ME MOR Y AR R AY CE#, CE2 VCC DE C ODE R Data Inputs/Outputs OE# A0-A12 Address Inputs DQ0 – DQ7 V cc Vss DESCRIPTION No Connection C ONT R OL C IR C UIT 02/Feb/07, v1.0 C OLUM N I/O Alliance Memory Inc Page 1 of 12

ブランド

ALLIANCEMEMORYINC

会社名

Alliance Memory, Inc.

本社国名

U.S.A

事業概要

Alliance Memory is a worldwide fabless manufacturer of legacy memory products that are pin for pin drop-in replacements for SRAM and DRAM ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) synchronous DRAMs. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM and DRAM products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in San Carlos, California.

供給状況

 
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