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UPA1552BH

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DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and 4.0 26.8 MAX. 10 lamp driver. 2.5 • 4 V driving is possible 10 MIN. FEATURES • Large Current and Low On-state Resistance ID(DC) = ±5.0 A 1.4 0.5±0.1 2.54 RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 3 A) 1.4 0.6±0.1 RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 3 A) • Low Input Capacitance Ciss = 200 pF TYP. 1 2 3 4 5 6 7 8 9 10 ORDERING INFORMATION Type Number µPA1552BH CONNECTION DIAGRAM 3 Package 5 7 9 10 Pin SIP 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS Note 1 60 V Gate to Source Voltage VGSS Note 2 ±20 V Drain Current (DC) ID(DC) ±5.0 A/unit Drain Current (pulse) ID(pulse) Note 3 ±20 A/unit Total Power Dissipation PT1 Note 4 28 W Total Power Dissipation PT2 Note 5 3.5 TCH 150 Tstg –55 to +150 Single Avalanche Current 5.0 EAS Note 6 2.5 10 A Single Avalanche Energy 1 ˚ C IAS Note 6 8 ˚ C Storage Temperature 6 W Channel Temperature 4 mJ Notes 1. VGS = 0 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 5. 4 Circuits, TA = 25 ˚C ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source 2. VDS = 0 4. 4 Circuits, TC = 25 ˚C 6. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0, RG = 25 Ω, L = 100 µH The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. G10599EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan © 1995

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