SSM3J02F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch
High Speed Switching Applications
Unit: mm
•
Small package
•
Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V)
•
Low gate threshold voltage
: Ron = 0.7 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
−30
V
Gate-source voltage
VGSS
±10
V
DC
ID
−600
Pulse
IDP
−1200
Drain power dissipation (Ta = 25°C)
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
mA
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
