2SC2230,2SC2230A
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SC2230,2SC2230A
High-Voltage General Amplifier Applications
Color TV Class-B Sound Output Applications
•
High breakdown voltage: VCEO = 180 V (2SC2230A)
•
Unit: mm
High DC current gain
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter
voltage
2SC2230
2SC2230A
Emitter-base voltage
Rating
Unit
VCBO
Collector-base voltage
Symbol
200
V
VCEO
160
180
V
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
50
mA
Collector power dissipation
PC
800
mW
Junction temperature
Tj
150
°C
JEITA
Tstg
−55 to 150
°C
TOSHIBA
Storage temperature range
JEDEC
TO-92MOD
―
2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
