MOTOROLA
Order this document
by MPSA62/D
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
MPSA62
thru
MPSA64 *
PNP Silicon
COLLECTOR 3
MPSA55, MPSA56
BASE
2
For Specifications,
See MPSA05, MPSA06 Data
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Symbol
MPSA62
MPSA63
MPSA64
Unit
Collector – Emitter Voltage
VCES
–20
–30
Vdc
Collector – Base Voltage
VCBO
–20
–30
Vdc
Emitter – Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Rating
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
–20
–30
—
—
—
—
–100
–100
—
–100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB= –15 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0)
V(BR)CES
MPSA62
MPSA63, MPSA64
Vdc
ICBO
MPSA62
MPSA63, MPSA64
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
nAdc
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
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