AO4606
30V Complementary MOSFET
General Description
Product Summary
The AO4606 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
N-Channel
VDS= 30V
P-Channel
-30V
ID= 6A (VGS=10V)
-6.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 30m
(VGS=10V)
< 28m
(VGS=-10V)
< 42m
(VGS=4.5V)
< 44m
(VGS=-4.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
D2
Top View
D1
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
n-channel
Pin1
Absolute Maximum Ratings TA=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
VDS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
ID
TA=70°
C
p-channel
Max p-channel
-30
Units
V
±20
±20
V
6
VGS
C
TA=25°
S1
-6.5
A
5
-5.3
IDM
30
-30
Avalanche Current C
IAS, IAR
10
23
A
Avalanche energy L=0.1mH C
TA=25°
C
EAS, EAR
5
26
mJ
Pulsed Drain Current
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 10: April 2012
2
Steady-State
Steady-State
1.3
TJ, TSTG
Symbol
t ≤ 10s
2
1.3
PD
TA=70°
C
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
48
74
32
W
°
C
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
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