This product complies with the RoHS Directive (EU 2002/95/EC).
Darlington Phototransistors
PNZ202S (PN202S)
Silicon planar type
Unit: mm
φ3.0±0.2
4.1±0.3
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■ Features
2.0±0.2
For optical control systems
12.5 min.
• Darlington output, high sensitivity
• Easy to combine with red and infrared light emitting diodes
• Small size (φ3) ceramic package
φ0.45±0.05
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■ Absolute Maximum Ratings Ta = 25°C
φ0.3±0.05
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-collector voltage (Base open)
VECO
5
V
Collector current
IC
Collector power dissipation
PC
30
Operating ambient temperature
Topr
Storage temperature
Tstg
mA
100
mW
−25 to +80
°C
−30 to +100
0.9±0.15
°C
2
1
1: Emitter
2: Collector
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
5.0
mA
0.5
µA
ICE(L)
VCE = 10 V, L = 2 lx
ICEO
VCE = 10 V
0.1
Peak emission wavelength
λp
VCE = 10 V
800
nm
Half-power angle
θ
The angle from which photocurrent
becomes 50%
30
°
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
150
µs
Photocurrent
*1, *2
ce
/D
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tin
ue
Dark current
Rise time *3
Fall time
tr
*3
tf
Collector-emitter saturation voltage *1
VCE(sat)
0.2
ICE(L) = 1 mA, L = 100 lx
µs
150
0.7
1.5
V
Ma
int
en
an
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2 856 K)
*2: Rank classification
Rank
QL
RL
ICE(L) (mA)
0.2 to 0.8
Color
SL
0.6 to 1.65
1.35 to 5.0
Red
*3: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
50 Ω
Sig. out
RL
90%
10%
(Output pulse)
tr
tr: Rise time
tf: Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2007
SHE00027CED
1