H5N3011P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0385-0200
Rev.2.00
Aug.05.2004
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00, Aug.05.2004, page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
Ratings
300
±30
88
176
88
176
Unit
V
V
A
A
A
A
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
30
54
150
0.833
150
–55 to +150
A
mJ
W
°C/W
°C
°C
