NAND01G-B2B
NAND02G-B2C
1 Gbit, 2 Gbit,
2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory
Features
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High Density NAND Flash memories
– Up to 2 Gbit memory array
– Cost effective solutions for mass storage
applications
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NAND interface
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
TSOP48 12 x 20 mm
FBGA
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Supply voltage: 1.8 V/3.0 V
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Page size
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
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Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
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Page Read/Program
– Random access: 25 µs (max)
– Sequential access: 30 ns (min)
– Page program time: 200 µs (typ)
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Cache Program and Cache Read modes
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Fast Block Erase: 2 ms (typ)
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Data protection
– Hardware Block Locking
– Hardware Program/Erase locked during
Power transitions
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Data integrity
– 100 000 Program/Erase cycles per block
(with ECC)
– 10 year data retention
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ECOPACK® packages
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Development tools
– Error Correction Code models
– Bad Blocks Management and Wear
Leveling algorithms
– Hardware simulation models
Electronic signature
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Serial number option
Status Register
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Copy Back Program mode
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VFBGA63 9.5 x 12 x 1 mm
VFBGA63 9 x 11 x 1 mm
Chip Enable ‘don’t care’
Table 1.
Device summary
Reference
Part number
NAND01GR3B2B, NAND01GW3B2B
NAND01G-B2B
NAND01GR4B2B, NAND01GW4B2B(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
NAND02GR4B2C, NAND02GW4B2C(1)
1. x16 organization only available for MCP products.
April 2007
Rev 4
1/61
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