DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1592
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
FEATURES
PACKAGE DRAWING (UNIT: mm)
• High DC current gain due to Darlington connection
• Low collector saturation
• Reverse deterrence type
• Ideal for use in devices such as pulse motor drivers and relay
drivers of PC terminals, and ignitors of general-purpose engines.
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
+300, −10
V
Emitter to base voltage
VEBO
10
V
Collector current
IC(DC)
5.0
A
Collector current
IC(pulse)*
10
A
IB(DC)
0.5
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Base current
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%DVH
&ROOHFWRU
(PLWWHU
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16137EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
