HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0529-0100
Rev.1.00
Feb.15.2005
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-A
(Previous code: SOP-8 )
5 6
7 8
D D D D
8
5
7 6
4
G
3
1 2
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
HAT1097R
HAT1097RJ
Drain to source voltage
VDSS
–60
–60
Gate to source voltage
VGSS
±20
±20
Drain current
ID
–5
–5
Note1
Drain peak current
ID (pulse)
–40
–40
Avalanche current
IAPNote3
—
–5
Avalanche energy
EARNote3
—
2.14
Channel dissipation
PchNote2
2
2
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Feb.15.2005, page 1 of 7
Unit
V
V
A
A
A
mJ
W
°C
°C
