HOME＞在庫検索＞在庫情報
R1RW0416DGE-2PRB0
Datasheet R1RW0416DI Series Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) REJ03C0109-0201 Rev.2.01 Jun 16, 2010 Description The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Features • Single 3.3 V supply: 3.3 V ± 0.3 V • Access time: 10ns/12 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 145/130 mA (max) • TTL standby current: 40 mA (max) • CMOS standby current: 5 mA (max) • Center VCC and VSS type pin out • Temperature range: −40 to +85°C Ordering Information Type No. Access time R1RW0416DGE-0PI 10ns R1RW0416DGE-2PI 12 ns R1RW0416DSB-0PI 10 ns R1RW0416DSB-2PI Package 400-mil 44-pin plastic SOJ (44P0K) 12 ns REJ03C0109-0201 Rev.2.01 Jun 16, 2010 400-mil 44-pin plastic TSOPII (44P3W-H) Page 1 of 11
RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年（平成22年）4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ＆ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
