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2SB945

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仕様・特性

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 2.7±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −5 ICP −10 PC 40 Tj 150 °C Storage temperature Tstg −55 to +150 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package W Junction temperature 2.54±0.3 A Collector power 0.5+0.2 –0.1 5.08±0.5 A Peak collector current 1.3±0.2 0.8±0.1 Unit Collector-base voltage (Emitter open) 1.4±0.1 Solder Dip (4.0) 14.0±0.5 pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw. 7.5±0.2 ■ Features 5.5±0.2 4.2±0.2 0.7±0.1 Unit: mm 10.0±0.2 °C Ta = 25°C dissipation 2 ■ Electrical Characteristics TC = 25°C ± 3°C ue Symbol Conditions Min Typ Max IC = −10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 −10 µA IEBO VEB = −5 V, IC = 0 −50 µA hFE1 tin on Emitter-base cutoff current (Collector open) −80 Unit VCEO Di sc Parameter Collector-emitter voltage (Base open) V VCE = −2 V, IC = − 0.1 A 45 hFE2 * VCE = −2 V, IC = −2 A 60 Collector-emitter saturation voltage VCE(sat) IC = −4 A, IB = − 0.2 A − 0.5 V Base-emitter saturation voltage VBE(sat) IC = −4 A, IB = − 0.2 A −1.5 V M ain te na nc e/ Forward current transfer ratio fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz Turn-on time ton IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A Storage time tstg VCC = −50 V Fall time 30 MHz 0.13 µs tf 0.50 µs 0.13 Pl Transition frequency  260 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00024BED 1

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