Datasheet
R1RW0416DI Series
Wide Temperature Range Version
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0109-0201
Rev.2.01
Jun 16, 2010
Description
The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access
time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most
appropriate for the application which requires high speed, high density memory and wide bit width configuration, such
as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin
plastic TSOPII for high density surface mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 10ns/12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 145/130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pin out
• Temperature range: −40 to +85°C
Ordering Information
Type No.
Access time
R1RW0416DGE-0PI
10ns
R1RW0416DGE-2PI
12 ns
R1RW0416DSB-0PI
10 ns
R1RW0416DSB-2PI
Package
400-mil 44-pin plastic SOJ (44P0K)
12 ns
REJ03C0109-0201 Rev.2.01
Jun 16, 2010
400-mil 44-pin plastic TSOPII (44P3W-H)
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