2SK2717
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717
DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance
: RDS (ON) = 2.3 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 4.4 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
900
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
5
Pulse (Note 1)
IDP
15
Drain power dissipation (Tc = 25°C)
PD
45
W
JEDEC
Single pulse avalanche energy
(Note 2)
EAS
595
mJ
JEITA
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
A
TOSHIBA
―
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.78
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
