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部品型式

MT46H16M16LFBF-6IT:H

製品説明
仕様・特性

256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 (4 Meg x 16 x 4 banks) – 8 Meg x 32 (2 Meg x 32 x 4 banks) • Row-size option – JEDEC-standard option – Reduced page-size option2 • Plastic "green" package – 60-ball VFBGA (8mm x 9mm) 1 – 90-ball VFBGA (8mm x 13mm) 2 • Timing – cycle time – 5ns @ CL = 3 (200 MHz) – 5.4ns @ CL = 3 (185 MHz) – 6ns @ CL = 3 (166 MHz) – 7.5ns @ CL = 3 (133 MHz) • Operating temperature range – Commercial (0˚ to +70˚C) – Industrial (–40˚C to +85˚C) • Design revision • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data—one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS-compatible inputs • On-chip temp sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Status read register (SRR) • Selectable output drive strength (DS) • Clock stop capability • 64ms refresh Notes: H 16M16 8M32 LF LG BF B5 -5 -54 -6 -75 None IT :H 1. Only available for x16 configuration. 2. Only available for x32 configuration. Table 1: Configuration Addressing Architecture 16 Meg x 16 8 Meg x 32 Reduced Page-Size Option2 Configuration 4 Meg x 16 x 2 Meg x 32 x 4 banks 4 banks 2 Meg x 32 x 4 banks Refresh count 8K 8K A[12:0] 4K A[11:0] 8K A[12:0] Column addressing 1 4K Row addressing PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 8K 512 A[8:0] 512 A[8:0] 256 A[7:0] Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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