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2SK2978ZYTL-E
2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.09Ω typ. (VGS = 4 V, I D = 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 2 1 D 4 G 1. Gate 2. Drain 3. Source 4. Drain S
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