RM10 - RM10Z
SILICON RECTIFIER DIODES
D2
PRV : 200 - 800 Volts
Io : 1.2 - 1.5 Amperes
FEATURES :
*
*
*
*
*
*
0.161 (4.10)
0.154 (3.90)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
RM10Z
RM10
RM10A
RM10B
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
200
400
600
800
V
Maximum RMS Voltage
VRMS
140
280
420
560
V
Maximum DC Blocking Voltage
VDC
200
400
600
800
V
IF
1.5
1.2
A
IFSM
120
150
A
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
VF
0.91
V
Ta = 25 °C
IR
10
µA
Ta = 100 °C
IR(H)
50
µA
CJ
30
pF
Typical Junction Capacitance (Note1)
RθJA
50
°C/W
Junction Temperature Range
TJ
- 65 to + 175
°C
Storage Temperature Range
TSTG
- 65 to + 175
°C
Typical Thermal Resistance (Note2)
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 31, 2005