2SK2393
Silicon N Channel MOS FET
REJ03G1010-0300
Rev.3.00
Apr 28, 2009
Application
High voltage / High speed power switching
Features
•
•
•
•
•
Low on-resistance, High breakdown voltage
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
1. Gate
2. Drain
(Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Ratings
1500
Unit
V
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
±20
8
20
8
200
150
–55 to +150
V
A
A
A
W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
REJ03G1010-0300 Rev.3.00 Apr 28, 2009
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