BSM 300 GA 120 DN2S
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
VCE
BSM 300 GA 120 DN2
BSM 300 GA 120 DN2 S
IC
Package
Ordering Code
1200V 430A
SINGLE SWITCH 1
C67076-A2007-A70
1200V 430A
SSW SENSE 1
C67070-A2017-A70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
± 20
IC
A
TC = 25 °C
430
TC = 80 °C
300
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
860
TC = 80 °C
600
Power dissipation per IGBT
W
Ptot
TC = 25 °C
2500
Chip temperature
Tj
+ 150
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.05
Diode thermal resistance, chip case
RthJCD
≤ 0.125
Insulation test voltage, t = 1min.
Vis
Creepage distance
°C
-40 ... + 125
K/W
2500
Vac
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
1
sec
40 / 125 / 56
Oct-27-1997
