SF25GZ51, SF25JZ51
TOSHIBA THYRISTOR
SILICON PLANAR TYPE
SF25GZ51, SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
Repetitive Peak Off−State Voltage: VDRM = 400V, 600 V
Repetitive Peak Reverse Voltage: VRRM = 400V, 600 V
Average On−State Current: IT (AV) = 25 A
Isolation Voltage: VIsol = 1500 V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak Reverse
Voltage
SF25GZ51
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive < 5 ms,
Tj = 0~125°C)
SYMBOL
SF25GZ51
SF25JZ51
VDRM
VRRM
RATING
400
V
600
500
V
VRSM
SF25JZ51
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
2
I t Limit Value
UNIT
720
IT (AV)
25
A
IT (RMS)
39
A
ITSM
2
350 (50 Hz)
385 (60 Hz)
A
JEDEC
―
JEITA
―
TOSHIBA
13-16A1B
Weight: 5.9 g (typ.)
2
I t
612
A s
Critical Rate of Rise of On−State
Current
(Note)
di / dt
100
A / μs
Peak Gate Power Dissipation
PGM
5
W
PG (AV)
0.5
W
Average Gate Power Dissipation
Peak Forward Gate Voltage
VFGM
10
V
Peak Reverse Gate Voltage
VRGM
−5
V
Peak Forward Gate Current
IGM
2
A
Tj
−40~125
°C
Storage Temperature Range
Tstg
−40~125
°C
Isolation Voltage (AC, t = 1 min.)
VIsol
1500
V
Junction Temperature
Note : di / dt Test Condition
iG = 30mA, tgw = 10μs, tgr ≤ 250ns
1
2004-07-06
