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2SB642Q

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仕様・特性

Transistors 2SB0642 (2SB642) Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) 4.5±0.1 2.0±0.2 R 0.9 R 0.7 3.5±0.1 (1.5) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 IC −100 mA Peak collector current ICP −200 PC 400 0.45±0.05 mA Collector power dissipation 0.55±0.1 V Collector current (0.85) 1.25±0.05 Parameter 2.4±0.2 1.0±0.1 ■ Absolute Maximum Ratings Ta = 25°C 4.1±0.2 pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) M Di ain sc te on na tin nc ue e/ d 6.9±0.1 ■ Features mW Junction temperature Tj 150 Tstg −55 to +150 2 (2.5) 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package °C Storage temperature 3 °C Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 Forward current transfer ratio * hFE VCE = −10 V, IC = −2 mA te na nc e/ on tin Collector-emitter voltage (Base open) ue Parameter Di sc ■ Electrical Characteristics Ta = 25°C ± 3°C Collector-emitter saturation voltage VCE(sat) Collector output capacitance (Common-emitter reverse transfer) Min Typ 160 IC = −100 mA, IB = −10 mA Max Unit V −1 µA −1 µA 460  −1 V VCB = −10 V, IE = 2 mA, f = 200 MHz Cob 80 MHz VCB = −10 V, IE = 0, f = 1 MHz fT M ain Transition frequency Conditions 3.5 pF Pl Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 160 to 260 210 to 340 290 to 460 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00045BED 1

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