Transistors
2SB0642 (2SB642)
Silicon PNP epitaxial planar type
For low-power general amplification
Unit: mm
2.5±0.1
(1.0)
(1.0)
(1.5)
4.5±0.1
2.0±0.2
R 0.9
R 0.7
3.5±0.1
(1.5)
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−60
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Emitter-base voltage (Collector open)
VEBO
−7
IC
−100
mA
Peak collector current
ICP
−200
PC
400
0.45±0.05
mA
Collector power dissipation
0.55±0.1
V
Collector current
(0.85)
1.25±0.05
Parameter
2.4±0.2
1.0±0.1
■ Absolute Maximum Ratings Ta = 25°C
4.1±0.2
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• High forward current transfer ratio hFE
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(0.4)
M
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6.9±0.1
■ Features
mW
Junction temperature
Tj
150
Tstg
−55 to +150
2
(2.5)
1
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
°C
Storage temperature
3
°C
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
V
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −20 V, IB = 0
Forward current transfer ratio *
hFE
VCE = −10 V, IC = −2 mA
te
na
nc
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tin
Collector-emitter voltage (Base open)
ue
Parameter
Di
sc
■ Electrical Characteristics Ta = 25°C ± 3°C
Collector-emitter saturation voltage
VCE(sat)
Collector output capacitance
(Common-emitter reverse transfer)
Min
Typ
160
IC = −100 mA, IB = −10 mA
Max
Unit
V
−1
µA
−1
µA
460
−1
V
VCB = −10 V, IE = 2 mA, f = 200 MHz
Cob
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
fT
M
ain
Transition frequency
Conditions
3.5
pF
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
160 to 260
210 to 340
290 to 460
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00045BED
1