Preliminary
FM20L08
1Mbit Bytewide FRAM Memory – Industrial Temp.
Features
1Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx8
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process
Superior to Battery-backed SRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
D
E
D S
N N
E G
M SI 00
M E 8V1
O D 2
C
FM
E W nt:
R E e
T N cem
O R p la
N O e
F R
SRAM Replacement
• JEDEC 128Kx8 SRAM pinout
• 60 ns Access Time, 350 ns Cycle Time
Low Power Operation
• 3.3V +10%, -5% Power Supply
• 22 mA Active Current
System Supervisor
• Low Voltage monitor drives external /LVL signal
• Write protects memory for low voltage condition
Industry Standard Configurations
• Industrial Temperature -40° C to +85° C
• 32-pin “Green”/RoHS TSOP (-TG)
Description
The FM20L08 is a 128K x 8 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional disadvantages, and system design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM20L08 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM20L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM20L08 includes a voltage monitor function
that monitors the power supply voltage. It asserts an
active-low signal that indicates the memory is writeprotected when VDD drops below a critical threshold.
When the /LVL signal is low, the memory is
protected against an inadvertent access and data
corruption.
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.81
Aug. 2009
Device specifications are guaranteed over the
industrial temperature range -40°C to +85°C.
Pin Configuration
A11
A9
A8
A13
WE
DNU
A15
VDD
LVL
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-I
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
Ordering Information
FM20L08-60-TG* 60 ns access, 32-pin
“Green”/RoHS TSOP
* End of life. Last time buy Nov. 2009.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
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