Numonyx™ Axcell™ M29EW
Datasheet
256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block)
3 V supply flash memory
Features
Supply voltage
— VCC = 2.7 to 3.6 V for Program, Erase and
Read
— VCCQ = 1.65 to 3.6 V for I/O buffers
Asynchronous Random/Page Read
— Page size: 16 words or 32 bytes
— Page access: 25 ns
— Random access: 100ns (Fortified BGA);
110 ns (TSOP)
Buffer Program
— 512-word program buffer
Programming time
— 0.68 µs per byte (1.48MB/s) typical when
using full buffer size in buffer program
Memory organization
— Uniform blocks, 128 Kbytes/64 Kwords
each
Program/Erase controller
— Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
— Read from any block during Program
Suspend
— Read and Program another block during
Erase Suspend
November 2009
208045-07
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer
— Faster Buffered/Batch Programming
— Faster Block and Chip Erase
Vpp/WP# pin protection
— Protects first or last block regardless of
block protection settings
Software protection
— Volatile Protection
— Non-Volatile Protection
— Password Protection
— Password Access
Extended Memory block
— 128-word/256-byte block for permanent,
secure identification.
— can be programmed and locked by factory
or by the customer
Low power consumption
— Standby and automatic standby
Minimum 100,000 Program/Erase cycles per
block
ETOXTM* X (65nm) MLC technology
Fortified BGA and TSOP packages
Green packages available
— RoHS Compliant
— Halogen Free
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