2SK2662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2662
DC−DC Converter, Relay Drive and Motor Drive
Applications
Low drain−source ON resistance
: RDS (ON) = 1.35 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 500 V)
Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
500
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
5
A
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
3.57
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
62.5
°C / W
Drain current
DC
JEDEC
―
JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-08-09
