PD -96175
IRFP4568PbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
150V
4.8m
5.9m
171
:
:
D
G
D
S
TO-247AC
IRFP4568PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
e
dv/dt
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ã
d
f
Units
171
121
684
517
3.45
± 30
18.5
-55 to + 175
A
W
W/°C
V
V/ns
°C
300
x
x
10lb in (1.1N m)
763
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
www.irf.com
Parameter
j
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
ij
Typ.
Max.
Units
–––
0.24
–––
0.29
–––
40
°C/W
1
09/08/08
