High Voltage IGBT
For Capacitor Discharge
Applications
IXGF30N400
VCES = 4000V
= 30A
IC25
VCE(sat) ≤ 3.1V
( Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
4000
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
TC = 25°C
30
A
IC110
TC = 110°C
15
A
ICM
TC = 25°C, VGE = 20V, 1ms
360
A
SSOA
VGE = 20V, TVJ = 125°C, RG = 2Ω
ICM = 300
A
(RBSOA)
Clamped Inductive Load
PC
TC = 25°C
VCE ≤ 0.8 • VCES
W
-55 ... +150
TJ
160
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
20..120 / 4.5..27
Nm/lb.in.
4000
g
2
Isolated Tab
5
1 = Gate
2 = Emitter
5 = Collector
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
V~
5
1
TL
TSOLD
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
FC
Mounting Force
VISOL
50/60Hz, 1 minute
Weight
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IC
= 250μA, VGE = 0V
4000
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = 0.8 • VCES, VGE = 0V
Note 2, TJ = 100°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
IC
= 30A, VGE = 15V, Note 1
= 90A
© 2009 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Characteristic Values
Min.
Typ.
Max.
BVCES
V
5.0
Advantages
V
50 μA
3 mA
±200
Capacitor Discharge
Pulser Circuits
nA
3.1
5.2
Applications
V
V
DS99978C(11/09)
