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2SC3334
2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Unit: mm Complementary to 2SA1321 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitter voltage VCEO 250 V Emitter-base voltage VEBO 5 V IC 50 ICP 100 Base current IB 20 mA Collector power dissipation PC 0.9 W JEDEC Junction temperature Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Collector current DC Pulse Storage temperature range mA TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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