PD - 96108
IRF7341QPbF
HEXFET® Power MOSFET
Typical Applications
• Anti-lock Braking Systems (ABS)
• Electronic Fuel Injection
• Air bag
VDSS
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•
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ID
55V
Benefits
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
5.1A
4.42A
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Lead-Free
Description
S1
Specifically designed for Automotive applications, these
HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of
power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in
Tape & Reel.
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ , TSTG
Max.
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
RθJA
www.irf.com
Max.
Maximum Junction-to-Ambient
Units
62.5
°C/W
1
07/23/07
