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IR2109
Data Sheet No. PD60163-U IR2109(4) (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground +/- 5V offset. Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21094) Lower di/dt gate driver for better noise immunity Shut down input turns off both channels. Available in Lead-Free Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600V max. 120 mA / 250 mA 10 - 20V 750 & 200 ns 540 ns (programmable up to 5uS for IR21094) Packages 14 Lead SOIC Description The IR2109(4)(S) are high voltage, high speed power 8 Lead SOIC MOSFET and IGBT drivers with dependent high and 14 Lead PDIP low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is 8 Lead PDIP compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC V CC VB IN IN HO SD SD VS COM LO TO LOAD up to 600V IR21094 IR2109 HO VB IN VS SD www.irf.com V CC IN (Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. V CC SD TO LOAD DT V SS RDT V SS COM LO 1
IR
International Rectifier
U.S.A
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