Y
NAR
I
ion. ange.
h
icat
ecif ct to c
l sp
fina e subje
ot a its ar
is n
m
This etric li
ice:
m
Not e para
Som
MITSUBISHI SEMICONDUCTOR
M63816P/FP/KP
IM
REL
P
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63816P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
PIN CONFIGURATION
IN1→
1
18 →O1
IN2→
2
17 →O2
IN3→
16 →O3
15 →O4
IN5→
5
14 →O5
IN6→ 6
INPUT
3
IN4→ 4
13 →O6
IN7→
7
12 →O7
IN8→
8
11 →O8
GND
FEATURES
Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO ≥ 35V)
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
q
9
10
→COM COMMOM
Package type 18P4G(P)
NC
20
1
IN1→ 2
NC
19 →O1
IN2→ 3
16 →O4
IN5→ 6
15 →O5
14 →O6
IN7→ 8
13 →O7
IN8→ 9
FUNCTION
The M63816P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The transistor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector
and emitter.
17 →O3
IN4→ 5
INPUT
18 →O2
IN3→ 4
IN6→ 7
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
OUTPUT
12 →O8
GND
OUTPUT
11 →COM
10
COMMOM
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7k
10k
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000
