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SF0R3G42
SF0R3G42 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF0R3G42 Unit: mm LOW POWER SWITCHING AND CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400V Repetitive Peak Reverse Voltage : VRRM = 400V Average On−State Current : IT (AV) = 300mA Plastic Mold Type. MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage (RGK = 1kΩ) VDRM VRRM 400 V Non−Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, RGK = 1kΩ, Tj = 0 ~ 125°C) VRSM 500 V Average On−State Current (Half Sine Waveform Ta = 45°C) IT (AV) 300 mA IT (RMS) 450 mA R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) 2 I t Limit Value Peak Gate Power Dissipation ITSM 2 I t 9 (50Hz) 9.9 (60Hz) A JEDEC JEITA TOSHIBA Weight: 0.2g TO−92 SC−43 13−5A1A 2 0.4 A s PGM 0.1 W PG (AV) 0.01 W Peak Forward Gate Voltage VFGM 3.5 V Peak Reverse Gate Voltage VRGM −5 V Peak Forward Gate Current IGM 125 mA Tj −40~125 °C Tstg −40~125 °C Average Gate Power Dissipation Junction Temperature Storage Temperature Range Note: Should be used with gate resistance as follows. 1 2001-07-13
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