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GT50J325Q
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Unit: mm Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 μs (typ.) • Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) • Low saturation Voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Unit VCES Collector-emitter voltage Rating 600 V V VGES ±20 DC IC 50 1 ms ICP 100 IF 50 IFM 100 Collector power dissipation (Tc = 25°C) PC 240 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms Storage temperature range A A JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.521 °C/W Thermal resistance (diode) Rth (j-c) 2.30 °C/W Equivalent Circuit Marking Part No. (or abbreviation code) Collector TOSHIBA GT50J325 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2006-11-01
TOSHIBA
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