1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories
Data Sheet
FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 10 mA (typical)
– Standby Current: 30 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns
– 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39SF010A
4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose
Flash (MPF) manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39SF010A/020A/040 devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39SF010A/020A/040 devices provide a maximum
Byte-Program time of 20 µsec. These devices use Toggle
Bit or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 10,000 cycles. Data retention is rated
at greater than 100 years.
function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39SF010A/020A/040 are offered in 32-lead PLCC and
32-lead TSOP packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1, 2, and 3 for pin assignments.
The SST39SF010A/020A/040 devices are suited for applications that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a
©2003 Silicon Storage Technology, Inc.
S71147-06-000
8/04
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
