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2SC6060Q
2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High-transition frequency: fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V DC IC 1.0 A pulse ICP 2.0 A IB 100 mA 2 W 20 W Tj 150 °C Tstg −55 to 150 °C Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C PC JEDEC ― JEITA SC-67 TOSHIBA 2-10U1A Weight: 1.7 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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