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2SC4237
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V .cn mi e V scs .i w w w IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A 4 A 8 A IB Base Current-Continuous IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc Website:www.iscsemi.cn
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