4R3TI20Y-080
DIODE & THYRISTOR MODULE
Outline Drawings, mm
800V / 20A
DIODE & THYRISTOR MODULE
Features
· Glass Passivation Chip
· Easy Connection
· Insulated Type
· Large di/dt
· Large dv/dt
Applications
· Inverters
· Battery Chargers
· DC Motors
Inner Curcuit Schematic
K
· General Purpose DC Power Supplies
G1
(4)
G2
+
G3
(1)
(2)
(3)
-
Maximum ratings and characteristics
種
機
Absolute maximum ratings
Item
Rating
Unit
800
V
800
V
900
V
20
A
From rated load, Sine wave 8.3ms
400
A
From rated load,8.3ms
660
A2s
Symbol
Repetitive peak reverse voltage
Repetitive peak off voltage
Conditions
VRRM
型
廃
VDRM
Non-repetitive peak reverse voltage
VRSM
Average output current
IO
Surge current
Di
2
It
inu
nt
ed
rod
p
50/60Hz Sine wave, Tc=93°C
sco
IFSM
2
ct.
u
It
Tj
-40 to +125
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage
Vis
Operating junction temperature
AC 1min.
2000
V
Moumting
M5
3.0
*1
N·m
Terminals
Screw torque
M4
1.7
*2
N·m
di/dt
Tj=125°C, f=50Hz, VD=1/2VDRM
100
A/µs
Thyristor
ITM=40A, IGM=0.3A, diG/dt=0.3A/µs
Forward peak gate current
IFGM
100µs max
2
A
Peak gate power
PGM
100µs max
5
W
Average gate power
PG(AV)
0.5
W
Peak reverse gate voltage
VRGM
5
V
*1: Recommendable value : 2.0 to 3.0 N·m(M5)
*2: Recommendable value : 1.3 to 1.7 N·m(M4)
