MR2A16A
FEATURES
256K x 16 MRAM Memory
• Fast 35 ns Read/Write cycle
• SRAM compatible timing, uses existing SRAM controllers without redesign
• Unlimited Read & Write endurance
• Data non-volatile for >20 years at temperature
• One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
• Replaces battery-backed SRAM solutions with MRAM
to improve reliability
• 3.3 volt power supply
• Automatic data protection on power loss
• Commercial, Industrial, Extended temperatures
• AEC-Q100 Grade 1 option
• All products meet MSL-3 moisture sensitivity level
• RoHS-compliant SRAM TSOP2 and BGA Packages
44-pin TSOP2
48-ball BGA
RoHS
INTRODUCTION
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The MR2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The product is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright © Everspin Technologies 2015
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MR2A16A Rev. 11.2, 6/2015
