DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2732UT1A
SWITCHING
P-CHANNEL POWER MOSFET
PACKAGE DRAWING (Unit: mm)
1
+0.1
0.42 −0.05
6 ±0.2
0.10 S
+0.05
−0
PACKAGE
μ PA2732UT1A-E1-AZ
Note
μ PA2732UT1A-E2-AZ
Note
4.1 ±0.2
PART NUMBER
1
0.2
1.0 MAX.
5.4 ±0.2
0
ORDERING INFORMATION
5 ±0.2
5
0.10 M
• Low on-state resistance
RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −20 A)
RDS(on)2 = 6.7 mΩ MAX. (VGS = −4.5 V, ID = −20 A)
• Low Ciss: Ciss = 3280 pF TYP.
• Small and surface mount package (8pin HVSON)
6
4
FEATURES
7
3
5.15 ±0.2
8
2
0.27 ±0.05
The μ PA2732UT1A is P-channel MOS Field Effect Transistor designed
for power management applications of notebook computers and Li-ion
battery protection circuit.
1.27
DESCRIPTION
8pin HVSON
8pin HVSON
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
Note Pb-free (This product does not contain Pb in external electrode.)
3.65 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals
are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
VGSS
m20
V
Gate to Source Voltage (VDS = 0 V)
m40
A
Drain Current (DC)
ID(DC)
Note1
Drain Current (pulse)
ID(pulse)
m160
A
Note2
Total Power Dissipation
PT1
1.5
W
Note2
Total Power Dissipation (PW =10 sec)
PT2
4.6
W
150
°C
Channel Temperature
Tch
−55 to +150
°C
Storage Temperature
Tstg
Note3
Single Avalanche Current
IAS
−20
A
Note3
Single Avalanche Energy
EAS
40
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
0.7 ±0.15
0.6 ±0.15
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17641EJ1V1DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
2005
