Data Sheet No. PD60043 Rev.O
IR2101(S)/IR2102(S) &(PbF)
HIGH AND LOW SIDE DRIVER
Features
Product Summary
• Floating channel designed for bootstrap operation
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VOFFSET
600V max.
IO+/-
130 mA / 270 mA
VOUT
10 - 20V
ton/off (typ.)
160 & 150 ns
Delay Matching
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
Also available LEAD-FREE
50 ns
Packages
Description
The IR2101(S)/IR2102(S) are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro8-Lead SOIC
8-Lead PDIP
prietary HVIC and latch immune CMOS technologies
IR2101S/IR2102S
IR2101/IR2102
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
VB
HIN
HIN
HO
LIN
LIN
VS
COM
LO
TO
LOAD
IR2101
up to 600V
VCC
VCC
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
www.irf.com
VB
HIN
HIN
HO
LIN
LIN
VS
COM
LO
TO
LOAD
IR2102
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