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部品型式

TG2211AFT

製品説明
仕様・特性

TG2211AFT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211AFT RF SPDT Switch Antenna switch for Bluetooth class 2 and 3 Antenna switch for diversity Switch for receive filters for mobile handsets Switch for local signals Features • Small external circuit : Built-in inverter • Low insertion loss : Loss = 0.45dB (typ.) @1.0 GHz • High isolation : ISL = 25dB (typ.) @1.0 GHz • Low voltage operation: VDD = VC (Hi) = 2.4 V (min.) • Small package Weight: 0.0045 g (typ.) : SSOP6-P-0.65 (TU6) package (2.0 mm × 2.1 mm × 0.6 mm) Pin Configuration and Marking (top view) VC 6 RFcom 5 VC 6 2 GND RFcom 5 VDD 4 1 RF1 VDD 4 WU 1 RF1 Equivalent Circuit 2 GND 3 RF2 Monthly dot marking 3 RF2 Maximum Ratings (Ta = 25°C, Zg = Zl = 50 Ω) Characteristic Symbol Conditions Rating Unit Pi ≤ 15 dBmW −0.5 (min.) / 6 (max.) V −0.5 (min.) / 6 (max.) V Supply voltage VDD Control voltage VC Pi ≤ 15 dBmW, VC − VDD ≤ 1.5 V Input power Pi VDD = 2.4 ~ 2.7 V, VC = −0.2 ~ 3.3 V 25 dBmW Total power dissipation PD (Note 1) 250 mW Operating temperature range Topr ⎯ −40 ~ 85 °C Storage temperature range Tstg ⎯ −55 ~ 150 °C Note 1: When mounted on a 20 mm × 24 mm × 0.4 mm double-sided Teflon printed circuit board (the entire reverse side is a ground connection) at Ta = 25°C. Caution This product is a Lead (Pb)-free article. This device is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. See Note 5 for the power supply sequencing requirement. 1 2005-08-02

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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