Photomicrosensor
EE-SY125
(Reflective)
Dimensions
Note:
Features
•
•
All units are in millimeters unless otherwise indicated.
Ultra-compact model.
PCB surface mounting type
Absolute Maximum Ratings
(Ta = 25°C)
Item
Emitter
Symbol
Rated
value
IF
50 mA
(see note 1)
Pulse forward
current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
Detector
Forward current
VECO
5V
Collector current IC
PC
75 mW
(see note 1)
Operating
Topr
–25°C to
85°C
Storage
Tstg
–40°C to
100°C
Soldering temperature
Internal Circuit
20 mA
Collector
dissipation
Tsol
260°C
(see note 3)
Ambient
temperature
A
C
K
E
Terminal No.
A
K
Note:
Name
Anode
Cathode
C
E
Unless otherwise specified, the
tolerances are ±0.15 mm.
Collector
Emitter
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.4 V max.
IF = 20 mA
Reverse current
IR
0.01 µA typ., 10 µA max.
VR = 4 V
Peak emission wavelength
λP
950 nm typ.
IF = 4 mA
Light current
IL
50 µA min., 300 µA max.
IF = 4 mA, VCE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 ȏx
Leakage current
ILEAK
200 nA max.
IF =4 mA, VCE = 2 V with no
reflection
Collector–Emitter saturated
voltage
VCE (sat)
---
---
Peak spectral sensitivity
wavelength
λP
930 nm typ.
VCE = 10 V
Rising time
tr
35 µs typ.
VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Falling time
tf
25 µs typ.
VCC = 2 V, RL = 1 kΩ, IL = 100 µA
Detector
Note:
204
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
