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HL6362MG-A
HL6362MG/63MG ODE2026-00 (M) Rev.0 Aug. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement. Features • • • • • • • Package Type • HL6362MG/63MG: MG Visible light output: 640 nm Typ Single longitudinal mode Optical output power: 40 mW CW Low operating current: 90 mA Typ Low operating voltage: 2.6 V Max Operating temperature: +50°C TE mode oscillation Internal Circuit • HL6362MG 1 Internal Circuit • HL6363MG 1 3 PD LD 3 PD 2 LD 2 Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO VR(LD) VR(PD) Topr Tstg Ratings 45 2 30 –10 to +50 –40 to +85 Unit mW V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Threshold current Operating current Symbol Ith IOP Min — — Typ 45 90 Max 60 110 Unit mA mA Operating voltage Beam divergence parallel to the junction Beam divergence perpendicular to the junction Lasing wavelength Monitor current VOP — 2.4 2.6 V θ// 7 10 13 ° PO = 40 mW PO = 40 mW θ⊥ 16 21 24 ° PO = 40 mW λp IS — 0.15 640 0.30 643 0.60 nm mA Rev.0 Aug. 01, 2008 page 1 of 4 Test Condition — PO = 40 mW PO = 40 mW PO = 40 mW ,VR(PD) = 5 V
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